| Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same NW Medendorp, M McClear, BP Keller, GR Brandes, RP LeToquin US Patent 8,125,137, 2012 | 429 | 2012 |
| Light emission device and method utilizing multiple emitters and multiple phosphors GR Brandes US Patent 7,564,180, 2009 | 410 | 2009 |
| Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same GR Brandes, X Xu US Patent 6,445,006, 2002 | 333 | 2002 |
| A method for fabricating large-area, patterned, carbon nanotube field emitters X Xu, GR Brandes Applied Physics Letters 74 (17), 2549-2551, 1999 | 287 | 1999 |
| III-V nitride substrate boule and method of making and using the same RP Vaudo, JS Flynn, GR Brandes, JM Redwing, MA Tischler US Patent 6,596,079, 2003 | 269 | 2003 |
| Iii-v nitride substrate boule and method of making and using the same RP Vaudo, JS Flynn, GR Brandes, JM Redwing, MA Tischler | 269 | 2001 |
| Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same NW Medendorp, MT McClear, BP Keller, GR Brandes, RP LeToquin US Patent 8,410,680, 2013 | 258 | 2013 |
| Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same JS Flynn, GR Brandes US Patent 7,919,791, 2011 | 255 | 2011 |
| Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates GR Brandes US Patent App. 11/758,395, 2008 | 238 | 2008 |
| Carbon fiber-based field emission devices X Xu, CP Beetz, GR Brandes, RW Boerstler, JW Steinbeck US Patent 5,973,444, 1999 | 224 | 1999 |
| LED light bulbs GR Brandes, JA Garceran US Patent 8,596,821, 2013 | 197 | 2013 |
| Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al, in, ga) n) substrates for opto … JS Flynn, GR Brandes, RP Vaudo, DM Keogh, X Xu, BE Landini US Patent 6,447,604, 2002 | 185 | 2002 |
| METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al, In, Ga) N) SUBSTRATES FOR OPTO … JS Flynn, GR Brandes, RP Vaudo, DM Keogh, X Xu, BE Landini | 185 | 2002 |
| Carbon fiber-based field emission devices X Xu, CP Beetz, GR Brandes, RW Boerstler, JW Steinbeck US Patent 5,872,422, 1999 | 154 | 1999 |
| Characteristics of semi‐insulating, Fe‐doped GaN substrates RP Vaudo, X Xu, A Salant, J Malcarne, GR Brandes physica status solidi (a) 200 (1), 18-21, 2003 | 138 | 2003 |
| 9.4-W/mm power density AlGaN-GaN HEMTs on free-standing GaN substrates KK Chu, PC Chao, MT Pizzella, R Actis, DE Meharry, KB Nichols, ... IEEE Electron Device Letters 25 (9), 596-598, 2004 | 134 | 2004 |
| Semi-insulating GaN and method of making the same RP Vaudo, X Xu, GR Brandes US Patent 7,170,095, 2007 | 133 | 2007 |
| Solid state lighting apparatuses and related methods GR Brandes, RD Underwood, BP Keller US Patent 8,970,131, 2015 | 112 | 2015 |
| Growth and characterization of low defect GaN by hydride vapor phase epitaxy X Xu, RP Vaudo, C Loria, A Salant, GR Brandes, J Chaudhuri Journal of crystal growth 246 (3-4), 223-229, 2002 | 110 | 2002 |
| Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions Z Lin, W Lu, J Lee, D Liu, JS Flynn, GR Brandes Applied Physics Letters 82 (24), 4364-4366, 2003 | 107 | 2003 |
