| Dynamical mean-field theory of strongly correlated fermion systems and the limit of infinite dimensions A Georges, G Kotliar, W Krauth, MJ Rozenberg Reviews of Modern Physics 68 (1), 13, 1996 | 8456 | 1996 |
| Two-dimensional electron gas with universal subbands at the surface of SrTiO3 AF Santander-Syro, O Copie, T Kondo, F Fortuna, S Pailhes, R Weht, ... Nature 469 (7329), 189-193, 2011 | 879 | 2011 |
| Nonvolatile memory with multilevel switching: a basic model MJ Rozenberg, IH Inoue, MJ Sanchez Physical review letters 92 (17), 178302, 2004 | 697 | 2004 |
| Mott transition in the d=∞ Hubbard model at zero temperature GK X. Y. Zhang, M. J. Rozenberg Physical Review Letters 70, 1666, 1993 | 487 | 1993 |
| Optical conductivity in Mott-Hubbard systems MJ Rozenberg, G Kotliar, H Kajueter, GA Thomas, DH Rapkine, JM Honig, ... Physical review letters 75 (1), 105, 1995 | 346 | 1995 |
| Mott-Hubbard transition in infinite dimensions MJ Rozenberg, XY Zhang, G Kotliar Physical review letters 69 (8), 1236, 1992 | 331 | 1992 |
| Mott-Hubbard transition in infinite dimensions. II MJ Rozenberg, G Kotliar, XY Zhang Physical Review B 49 (15), 10181, 1994 | 312 | 1994 |
| A leaky‐integrate‐and‐fire neuron analog realized with a Mott insulator P Stoliar, J Tranchant, B Corraze, E Janod, MP Besland, F Tesler, ... Advanced Functional Materials 27 (11), 1604740, 2017 | 256 | 2017 |
| Challenges in materials and devices for resistive-switching-based neuromorphic computing J Del Valle, JG Ramírez, MJ Rozenberg, IK Schuller Journal of Applied Physics 124 (21), 2018 | 252 | 2018 |
| Mechanism for bipolar resistive switching in transition-metal oxides MJ Rozenberg, MJ Sanchez, R Weht, C Acha, F Gomez-Marlasca, P Levy Physical Review B—Condensed Matter and Materials Physics 81 (11), 115101, 2010 | 230 | 2010 |
| Transfer of spectral weight in spectroscopies of correlated electron systems MJ Rozenberg, G Kotliar, H Kajueter Physical Review B 54 (12), 8452, 1996 | 217 | 1996 |
| Landau theory of the finite temperature Mott transition G Kotliar, E Lange, MJ Rozenberg Physical review letters 84 (22), 5180, 2000 | 208 | 2000 |
| Subthreshold firing in Mott nanodevices J Del Valle, P Salev, F Tesler, NM Vargas, Y Kalcheim, P Wang, J Trastoy, ... Nature 569 (7756), 388-392, 2019 | 200 | 2019 |
| Integer-filling metal-insulator transitions in the degenerate Hubbard model MJ Rozenberg Physical Review B 55 (8), R4855, 1997 | 199 | 1997 |
| Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices K Fujiwara, T Nemoto, MJ Rozenberg, Y Nakamura, H Takagi Japanese Journal of Applied Physics 47 (8R), 6266, 2008 | 196 | 2008 |
| Resistive switching in Mott insulators and correlated systems E Janod, J Tranchant, B Corraze, M Querré, P Stoliar, M Rozenberg, ... Advanced Functional Materials 25 (40), 6287-6305, 2015 | 195 | 2015 |
| Finite temperature mott transition in the hubbard model in infinite dimensions MJ Rozenberg, R Chitra, G Kotliar Physical review letters 83 (17), 3498, 1999 | 188 | 1999 |
| Critical behavior near the Mott transition in the Hubbard model G Moeller, Q Si, G Kotliar, M Rozenberg, DS Fisher Physical review letters 74 (11), 2082, 1995 | 180 | 1995 |
| Dynamical mean field theory with the density matrix renormalization group DJ García, K Hallberg, MJ Rozenberg Physical review letters 93 (24), 246403, 2004 | 176 | 2004 |
| Universal electric-field-driven resistive transition in narrow-gap Mott insulators P Stoliar, L Cario, E Janod, B Corraze, C Guillot-Deudon, ... arXiv preprint arXiv:1309.5315, 2013 | 168 | 2013 |
