Rapid thermal annealing effects on the structural properties and density of defects in and films deposited by electron cyclotron resonance E San Andrés, A Del Prado, FL Martınez, I Mártil, D Bravo, FJ López Journal of Applied Physics 87 (3), 1187-1192, 2000 | 104 | 2000 |
A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition S Duenas, H Castán, H García, E San Andrés, M Toledano-Luque, I Mártil, ... Semiconductor science and technology 20 (10), 1044, 2005 | 102 | 2005 |
High quality Ti-implanted Si layers above the Mott limit J Olea, M Toledano-Luque, D Pastor, E San-Andrés, I Mártil, ... Journal of Applied Physics 107 (10), 2010 | 72 | 2010 |
Physical properties of high pressure reactively sputtered TiO2 ES Andrés, M Toledano-Luque, A Prado, MA Navacerrada, I Mártil, ... Journal of Vacuum Science & Technology A 23 (6), 1523-1530, 2005 | 64 | 2005 |
High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors S Wirths, D Stange, MA Pampillón, AT Tiedemann, G Mussler, A Fox, ... ACS applied materials & interfaces 7 (1), 62-67, 2015 | 60 | 2015 |
Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance A Del Prado, E San Andrés, FL Martınez, I Mártil, G González-Dı́az, ... Vacuum 67 (3-4), 507-512, 2002 | 58 | 2002 |
Bonding configuration and density of defects of thin films deposited by the electron cyclotron resonance plasma method E San Andrés, A Del Prado, I Mártil, G González-Dıaz, D Bravo, FJ López, ... Journal of Applied Physics 94 (12), 7462-7469, 2003 | 53 | 2003 |
Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method FL Martınez, R Ruiz-Merino, A Del Prado, E San Andrés, I Mártil, ... Thin Solid Films 459 (1-2), 203-207, 2004 | 48 | 2004 |
High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties M Toledano-Luque, E San Andrés, A del Prado, I Mártil, ML Lucía, ... Journal of Applied Physics 102 (4), 2007 | 46 | 2007 |
Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios M Toledano-Luque, E San Andrés, J Olea, A Del Prado, I Mártil, W Bohne, ... Materials science in semiconductor processing 9 (6), 1020-1024, 2006 | 42 | 2006 |
RF split capacitance–voltage measurements of short-channel and leaky MOSFET devices E San Andres, L Pantisano, J Ramos, S Severi, L Trojman, S De Gendt, ... IEEE electron device letters 27 (9), 772-774, 2006 | 32 | 2006 |
A reliable metric for mobility extraction of short-channel MOSFETs S Severi, L Pantisano, E Augendre, E San Andrés, P Eyben, K De Meyer IEEE transactions on electron devices 54 (10), 2690-2698, 2007 | 31 | 2007 |
Optical and structural properties of films deposited by electron cyclotron resonance and their correlation with composition A Del Prado, E San Andrés, I Mártil, G González-Díaz, D Bravo, FJ López, ... Journal of applied physics 93 (11), 8930-8938, 2003 | 30 | 2003 |
Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique L Wang, HS Reehal, FL Martinez, E San Andrés, A Del Prado Semiconductor science and technology 18 (7), 633, 2003 | 27 | 2003 |
Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties PC Feijoo, A Del Prado, M Toledano-Luque, E San Andrés, ML Lucía Journal of Applied Physics 107 (8), 2010 | 24 | 2010 |
Thermally induced modifications on bonding configuration and density of defects of plasma deposited films E San Andrés, A Del Prado, I Mártil, G González-Dı́az, D Bravo, FJ López Journal of applied physics 92 (4), 1906-1913, 2002 | 24 | 2002 |
Optical spectroscopic study of the SiN∕ HfO2 interfacial formation during rf sputtering of HfO2 M Toledano-Luque, ML Lucía, A Del Prado, E San Andrés, I Mártil, ... Applied Physics Letters 91 (19), 2007 | 22 | 2007 |
Negligible effect of process-induced strain on intrinsic NBTI behavior A Shickova, B Kaczer, P Verheyen, G Eneman, E San Andres, M Jurczak, ... IEEE electron device letters 28 (3), 242-244, 2007 | 21 | 2007 |
Temperature effects on the electrical properties and structure of interfacial and bulk defects in devices FL Martınez, E San Andrés, A Del Prado, I Mártil, D Bravo, FJ López Journal of Applied Physics 90 (3), 1573-1581, 2001 | 21 | 2001 |
Physical properties of high pressure reactively sputtered hafnium oxide M Toledano-Luque, FL Martínez, E San Andres, A Del Prado, I Martil, ... Vacuum 82 (12), 1391-1394, 2008 | 20 | 2008 |