Spremljaj
Mathieu Luisier
Mathieu Luisier
Preverjeni e-poštni naslov na iis.ee.ethz.ch
Naslov
Navedeno
Navedeno
Leto
Sub-10 nm carbon nanotube transistor
AD Franklin, M Luisier, SJ Han, G Tulevski, CM Breslin, L Gignac, ...
Nano letters 12 (2), 758-762, 2012
11072012
Atomistic simulation of nanowires in the s p 3 d 5 s* tight-binding formalism: From boundary conditions to strain calculations
M Luisier, A Schenk, W Fichtner, G Klimeck
Physical Review B 74 (20), 205323, 2006
4922006
Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering
M Luisier, G Klimeck
Physical Review B 80 (15), 155430, 2009
2732009
Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling
M Luisier, G Klimeck
Journal of Applied Physics 107 (8), 2010
2252010
On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients
C Jeong, R Kim, M Luisier, S Datta, M Lundstrom
Journal of Applied Physics 107 (2), 2010
2162010
Fast methods for computing selected elements of the Green’s function in massively parallel nanoelectronic device simulations
A Kuzmin, M Luisier, O Schenk
Euro-Par 2013 Parallel Processing: 19th International Conference, Aachen …, 2013
1892013
Atomistic full-band design study of InAs band-to-band tunneling field-effect transistors
M Luisier, G Klimeck
IEEE Electron Device Letters 30 (6), 602-604, 2009
1892009
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ...
Nature Electronics 4 (2), 98-108, 2021
1872021
Quantum transport in two-and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green’s function formalism
M Luisier, A Schenk, W Fichtner
Journal of Applied physics 100 (4), 2006
1752006
Soft surfaces of nanomaterials enable strong phonon interactions
D Bozyigit, N Yazdani, M Yarema, O Yarema, WMM Lin, S Volk, ...
Nature 531, 618-622, 2016
1652016
Atomic Scale Plasmonic Switch
A Emboras, J Niegemann, P Ma, C Haffner, A Pedersen, M Luisier, ...
Nano letters 16, 709-714, 2016
1512016
Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures
M Luisier, G Klimeck
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1232009
Ab initio simulation of single- and few-layer transistors: Effect of electron-phonon scattering
Á Szabó, R Rhyner, M Luisier
Physical Review B 92 (3), 035435, 2015
1022015
Leakage-reduction design concepts for low-power vertical tunneling field-effect transistors
S Agarwal, G Klimeck, M Luisier
IEEE Electron Device Letters 31 (6), 621-623, 2010
1022010
Performance comparisons of III–V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)
SH Park, Y Liu, N Kharche, MS Jelodar, G Klimeck, MS Lundstrom, ...
IEEE Transactions on Electron Devices 59 (8), 2107-2114, 2012
1002012
Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness
M Luisier, G Klimeck
Applied Physics Letters 94 (22), 2009
1002009
Microscopic analysis of optical gain in InGaN∕ GaN quantum wells
B Witzigmann, V Laino, M Luisier, UT Schwarz, G Feicht, W Wegscheider, ...
Applied Physics Letters 88 (2), 2006
962006
Tuning electron–phonon interactions in nanocrystals through surface termination
N Yazdani, D Bozyigit, K Vuttivorakulchai, M Luisier, I Infante, V Wood
Nano letters 18 (4), 2233-2242, 2018
922018
Ab-initio simulation of van der Waals MoTe2-SnS2 heterojunction TFETs for low power electronics
A Szabo, S Koester, M Luisier
IEEE Electron Device Letters, 2015
922015
Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations
M Luisier, A Schenk, W Fichtner
Applied Physics Letters 90 (10), 2007
892007
Sistem trenutno ne more izvesti postopka. Poskusite znova pozneje.
Članki 1–20