| Novel integration process and performances analysis of Low STandby Power (LSTP) 3D Multi-Channel CMOSFET (MCFET) on SOI with Metal/High-K Gate stack E Bernard, T Ernst, B Guillaumot, N Vulliet, V Barral, V Maffini-Alvaro, ... 2008 Symposium on VLSI Technology, 16-17, 2008 | 255 | 2008 |
| Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications M Kanoun, A Souifi, T Baron, F Mazen Applied Physics Letters 84 (25), 5079-5081, 2004 | 157 | 2004 |
| Excitonic photoluminescence from Si-capped strained layers D Dutartre, G Bremond, A Souifi, T Benyattou Physical Review B 44 (20), 11525, 1991 | 131 | 1991 |
| Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication S Decossas, F Mazen, T Baron, G Brémond, A Souifi Nanotechnology 14 (12), 1272, 2003 | 107 | 2003 |
| Electronic properties of Ge nanocrystals for non volatile memory applications M Kanoun, C Busseret, A Poncet, A Souifi, T Baron, E Gautier Solid-State Electronics 50 (7-8), 1310-1314, 2006 | 95 | 2006 |
| Optical and electrical properties of Si-nanocrystals ion beam synthesized in SiO2 B Garrido, M Lopez, A Pérez-Rodrıguez, C Garcıa, P Pellegrino, R Ferré, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004 | 88 | 2004 |
| Optical properties of silicon nanocrystal LEDs J De La Torre, A Souifi, A Poncet, C Busseret, M Lemiti, G Bremond, ... Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 326-330, 2003 | 79 | 2003 |
| Study of trapping phenomenon in 4H-SiC MESFETs: dependence on substrate purity N Sghaier, JM Bluet, A Souifi, G Guillot, E Morvan, C Brylinski IEEE Transactions on Electron Devices 50 (2), 297-302, 2003 | 67 | 2003 |
| Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC–Vand capacitance transient techniques C Busseret, A Souifi, T Baron, G Guillot, F Martin, MN Semeria, J Gautier Superlattices and Microstructures 28 (5-6), 493-500, 2000 | 65 | 2000 |
| pH driven addressing of silicon nanowires onto Si3N4/SiO2 micro-patterned surfaces JP Cloarec, C Chevalier, J Genest, J Beauvais, H Chamas, Y Chevolot, ... Nanotechnology 27 (29), 295602, 2016 | 62 | 2016 |
| Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices T Baron, F Martin, P Mur, C Wyon, M Dupuy, C Busseret, A Souifi, ... Applied surface science 164 (1-4), 29-34, 2000 | 61 | 2000 |
| Nucleation control of CVD growth silicon nanocrystals for quantum devices T Baron, F Mazen, C Busseret, A Souifi, P Mur, F Fournel, MN Séméria, ... Microelectronic engineering 61, 511-515, 2002 | 53 | 2002 |
| Electrical and optical characterisation of vanadium in 4H and 6H–SiC V Lauer, G Brémond, A Souifi, G Guillot, K Chourou, M Anikin, R Madar, ... Materials Science and Engineering: B 61, 248-252, 1999 | 48 | 1999 |
| Photoluminescence and electrical characterization of SiGe/Si heterostructures grown by rapid thermal chemical vapour deposition G Bremond, A Souifi, T Benyattou, D Dutartre Thin Solid Films 222 (1-2), 60-68, 1992 | 47 | 1992 |
| Optimized pre-treatment process for MOS-GaN devices passivation A Chakroun, H Maher, E Al Alam, A Souifi, V Aimez, R Arès, A Jaouad IEEE Electron Device Letters 35 (3), 318-320, 2014 | 39 | 2014 |
| Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates N Sghaier, M Trabelsi, N Yacoubi, JM Bluet, A Souifi, G Guillot, ... Microelectronics Journal 37 (4), 363-370, 2006 | 38 | 2006 |
| Thermal hole emission from Si/Si1−xGex/Si quantum wells by deep level transient spectroscopy O Chretien, R Apetz, L Vescan, A Souifi, H Lüth, K Schmalz, JJ Koulmann Journal of applied physics 78 (9), 5439-5447, 1995 | 38 | 1995 |
| Work function tuning through dopant scanning and related effects in Ni fully silicided gate for sub-45nm nodes CMOS D Aime, B Froment, F Cacho, V Carron, S Descombes, Y Morand, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 87-90, 2004 | 36 | 2004 |
| Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics S Hlali, N Hizem, L Militaru, A Kalboussi, A Souifi Microelectronics reliability 75, 154-161, 2017 | 35 | 2017 |
| Ion-induced tracks in amorphous Si3N4 films B Canut, A Ayari, K Kaja, AL Deman, M Lemiti, A Fave, A Souifi, S Ramos Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008 | 35 | 2008 |
Gérard GuillotINL,INSA LYONVerified email at insa-lyon.fr
