Liang Liu (刘亮)
Liang Liu (刘亮)
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Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application
L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ...
Advanced Functional Materials 29 (25), 1901106, 2019
Symmetry-dependent field-free switching of perpendicular magnetization
L Liu, C Zhou, X Shu, C Li, T Zhao, W Lin, J Deng, Q Xie, S Chen, J Zhou, ...
Nature Nanotechnology 16 (3), 277-282, 2021
Current-induced magnetization switching in all-oxide heterostructures
L Liu, Q Qin, W Lin, C Li, Q Xie, S He, X Shu, C Zhou, Z Lim, J Yu, W Lu, ...
Nature nanotechnology 14 (10), 939-944, 2019
Emergence of Topological Hall Effect in a SrRuO3 Single Layer
Q Qin, L Liu, W Lin, X Shu, Q Xie, Z Lim, C Li, S He, GM Chow, J Chen
Advanced Materials 31 (8), 1807008, 2019
Continuously controllable photoconductance in freestanding BiFeO3 by the macroscopic flexoelectric effect
R Guo, L You, W Lin, A Abdelsamie, X Shu, G Zhou, S Chen, L Liu, X Yan, ...
Nature communications 11 (1), 2571, 2020
Electrical switching of perpendicular magnetization in a single ferromagnetic layer
L Liu, J Yu, R González-Hernández, C Li, J Deng, W Lin, C Zhou, T Zhou, ...
Physical Review B 101 (22), 220402, 2020
Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn
J Zhou, X Wang, Y Liu, J Yu, H Fu, L Liu, S Chen, J Deng, W Lin, X Shu, ...
Science advances 5 (5), eaau6696, 2019
A van der Waals Synaptic Transistor Based on Ferroelectric Hf0. 5Zr0. 5O2 and 2D Tungsten Disulfide
L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ...
Advanced Electronic Materials, 2000057, 2020
Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer
Q Xie, W Lin, B Yang, X Shu, S Chen, L Liu, X Yu, MBH Breese, T Zhou, ...
Advanced Materials 31 (21), 1900776, 2019
An Electronic Synapse Based on 2D Ferroelectric CuInP2S6
B Li, S Li, H Wang, L Chen, L Liu, X Feng, Y Li, J Chen, X Gong, KW Ang
Advanced Electronic Materials 6 (12), 2000760, 2020
Free Field Electric Switching of Perpendicularly Magnetized Thin Film by Spin Current Gradient
S Chen, J Yu, Q Xie, X Zhang, W Lin, L Liu, J Zhou, X Shu, R Guo, ...
ACS applied materials & interfaces 11 (33), 30446-30452, 2019
Spin–Orbit Torque‐Induced Domain Nucleation for Neuromorphic Computing
J Zhou, T Zhao, X Shu, L Liu, W Lin, S Chen, S Shi, X Yan, X Liu, J Chen
Advanced Materials, 2103672, 2021
Current-induced self-switching of perpendicular magnetization in CoPt single layer
L Liu, C Zhou, T Zhao, B Yao, J Zhou, X Shu, S Chen, S Shi, S Xi, D Lan, ...
Nature Communications 13 (1), 3539, 2022
Field-free magnetization switching induced by the unconventional spin–orbit torque from WTe2
Q Xie, W Lin, S Sarkar, X Shu, S Chen, L Liu, T Zhao, C Zhou, H Wang, ...
APL Materials 9 (5), 2021
Magnetic asymmetry induced anomalous spin-orbit torque in IrMn
J Zhou, X Shu, Y Liu, X Wang, W Lin, S Chen, L Liu, Q Xie, T Hong, ...
Physical Review B 101 (18), 184403, 2020
Overcoming the Limits of the Interfacial Dzyaloshinskii–Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures
H Wang, Y Dai, Z Liu, Q Xie, C Liu, W Lin, L Liu, P Yang, J Wang, ...
Advanced Materials 32 (14), 1904415, 2020
Interface-engineered electron and hole tunneling
R Guo, L Tao, M Li, Z Liu, W Lin, G Zhou, X Chen, L Liu, X Yan, H Tian, ...
Science Advances 7 (13), eabf1033, 2021
Modulation of Spin–Orbit Torque from SrRuO3 by Epitaxial‐Strain‐Induced Octahedral Rotation
J Zhou, X Shu, W Lin, DF Shao, S Chen, L Liu, P Yang, EY Tsymbal, ...
Advanced Materials 33 (30), 2007114, 2021
Perpendicular Magnetic Anisotropy and Dzyaloshinskii-Moriya Interaction at an Oxide/Ferromagnetic Metal Interface
W Lin, B Yang, AP Chen, X Wu, R Guo, S Chen, L Liu, Q Xie, X Shu, Y Hui, ...
Physical Review Letters 124 (21), 217202, 2020
Field-Free Switching of Perpendicular Magnetization Induced by Longitudinal Spin-Orbit-Torque Gradient
X Shu, L Liu, J Zhou, W Lin, Q Xie, T Zhao, C Zhou, S Chen, H Wang, ...
Physical Review Applied 17 (2), 024031, 2022
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