Spremljaj
Qinghuang Lin
Qinghuang Lin
Director, Technology Development Center, ASML US
Preverjeni e-poštni naslov na asml.com
Naslov
Navedeno
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Leto
Method for air gap interconnect integration using photo-patternable low k material
LA Clevenger, M Darnon, Q Lin, AD Lisi, SV Nitta
US Patent 8,241,992, 2012
3702012
Modeling line edge roughness effects in sub 100 nanometer gate length devices
P Oldiges, Q Lin, K Petrillo, M Sanchez, M Ieong, M Hargrove
2000 International Conference on Simulation of Semiconductor Processes and …, 2000
2102000
Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method
Q Lin, M Angelopoulos, AD Katnani, R Sooriyakumaran
US Patent 6,087,064, 2000
1512000
Measurement of bandgap energies in low-k organosilicates
MT Nichols, W Li, D Pei, GA Antonelli, Q Lin, S Banna, Y Nishi, JL Shohet
Journal of Applied Physics 115 (9), 2014
1472014
Patternable low dielectric constant materials and their use in ULSI interconnection
Q Lin, R Sooriyakumaran
US Patent 7,041,748, 2006
1382006
Small angle x-ray scattering metrology for sidewall angle and cross section of nanometer scale line gratings
T Hu, RL Jones, W Wu, EK Lin, Q Lin, D Keane, S Weigand, J Quintana
Journal of Applied Physics 96 (4), 1983-1987, 2004
962004
Effect of drawing on structure and properties of a liquid crystalline polymer and polycarbonate in‐situ composite
Q Lin, J Jho, AF Yee
Polymer Engineering & Science 33 (13), 789-798, 1993
911993
Airgap-containing interconnect structure with patternable low-k material and method of fabricating
Q Lin
US Patent 8,476,758, 2013
802013
Phase transformations of a liquid crystalline epoxy during curing
Q Lin, AF Yee, JD Earls, RE Hefner Jr, HJ Sue
Polymer 35 (12), 2679-2682, 1994
761994
Toward controlled resist line-edge roughness: material origin of line-edge roughness in chemically amplified positive-tone resists
Q Lin, R Sooriyakumaran, WS Huang
Advances in Resist Technology and Processing XVII 3999, 230-239, 2000
712000
Resist composition and process of forming a patterned resist layer on a substrate
Q Lin, TM Hughes, GM Jordhamo, AD Katnani, WM Moreau, N Patel
US Patent 6,210,856, 2001
692001
Evolution of structure and properties of a liquid crystalline epoxy during curing
Q Lin, AF Yee, HJ Sue, JD Earls, RE Hefner Jr
Journal of Polymer Science Part B: Polymer Physics 35 (14), 2363-2378, 1997
681997
Scalable nanostructured carbon electrode arrays for enhanced dopamine detection
S Demuru, L Nela, N Marchack, SJ Holmes, DB Farmer, GS Tulevski, ...
ACS sensors 3 (4), 799-805, 2018
642018
Quantifying the stress relaxation modulus of polymer thin films via thermal wrinkling
EP Chan, S Kundu, Q Lin, CM Stafford
ACS applied materials & interfaces 3 (2), 331-338, 2011
632011
A water-castable, water-developable chemically amplified negative-tone resist
Q Lin, T Steinhäusler, L Simpson, M Wilder, DR Medeiros, CG Willson, ...
Chemistry of materials 9 (8), 1725-1730, 1997
581997
Wafer-scale integration of sacrificial nanofluidic chips for detecting and manipulating single DNA molecules
C Wang, SW Nam, JM Cotte, CV Jahnes, EG Colgan, RL Bruce, M Brink, ...
Nature communications 8 (1), 14243, 2017
552017
Photopatternable dielectric materials for BEOL applications and methods for use
RD Allen, PJ Brock, BW Davis, Q Lin, RD Miller, A Nelson, ...
US Patent 8,029,971, 2011
532011
Design of photoresists with reduced environmental impact. 1. Water-soluble resists based on photo-cross-linking of poly (vinyl alcohol)
JM Havard, SY Shim, JMJ Fréchet, Q Lin, DR Medeiros, CG Willson, ...
Chemistry of materials 11 (3), 719-725, 1999
511999
Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures
RD Allen, PJ Brock, BW Davis, WSS Huang, Q Lin, A Nelson, ...
US Patent 7,709,370, 2010
502010
Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method
Q Lin, M Angelopoulos, AD Katnani, R Sooriyakumaran
US Patent 6,340,734, 2002
462002
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