Jung Han
Jung Han
William Norton Professor of Electrical Engineering, Yale University
Verified email at
Cited by
Cited by
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
M Kneissl, TY Seong, J Han, H Amano
nature photonics 13 (4), 233-244, 2019
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
AlGaN/GaN quantum well ultraviolet light emitting diodes
J Han, MH Crawford, RJ Shul, JJ Figiel, M Banas, L Zhang, YK Song, ...
Applied physics letters 73 (12), 1688-1690, 1998
Graded band gap ohmic contact to p‐ZnSe
Y Fan, J Han, L He, J Saraie, RL Gunshor, M Hagerott, H Jeon, ...
Applied physics letters 61 (26), 3160-3162, 1992
Stress evolution during metalorganic chemical vapor deposition of GaN
S Hearne, E Chason, J Han, JA Floro, J Figiel, J Hunter, H Amano, ...
Applied Physics Letters 74 (3), 356-358, 1999
The band-gap bowing of alloys
SR Lee, AF Wright, MH Crawford, GA Petersen, J Han, RM Biefeld
Applied physics letters 74 (22), 3344-3346, 1999
Low-dislocation-density GaN from a single growth on a textured substrate
CIH Ashby, CC Mitchell, J Han, NA Missert, PP Provencio, DM Follstaedt, ...
Applied Physics Letters 77 (20), 3233-3235, 2000
Stress and defect control in GaN using low temperature interlayers
H Amano, M Iwaya, T Kashima, M Katsuragawa, I Akasaki, J Han, ...
Japanese journal of applied physics 37 (12B), L1540, 1998
Influence of MgO and passivation on AlGaN/GaN high-electron-mobility transistors
B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied Physics Letters 80 (9), 1661-1663, 2002
Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors
KE Waldrip, J Han, JJ Figiel, H Zhou, E Makarona, AV Nurmikko
Applied Physics Letters 78 (21), 3205-3207, 2001
The effect of on morphology evolution during GaN metalorganic chemical vapor deposition
J Han, TB Ng, RM Biefeld, MH Crawford, DM Follstaedt
Applied physics letters 71 (21), 3114-3116, 1997
Continuous-wave, room temperature, ridge waveguide green-blue diode laser
A Salokatve, H Jeon, J Ding, M Hovinen, AV Nurmikko, DC Grillo, L He, ...
Electronics Letters 25 (29), 2192-2194, 1993
III-Nitride based light emitting diodes and applications
TY Seong, J Han, H Amano, H Morkoç
Springer, 2017
Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy
C Theodoropoulos, TJ Mountziaris, HK Moffat, J Han
Journal of crystal growth 217 (1-2), 65-81, 2000
Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue‐green laser diode
GC Hua, N Otsuka, DC Grillo, Y Fan, J Han, MD Ringle, RL Gunshor, ...
Applied physics letters 65 (11), 1331-1333, 1994
Mesoporous GaN for Photonic Engineering Highly Reflective GaN Mirrors as an Example
C Zhang, SH Park, D Chen, DW Lin, W Xiong, HC Kuo, CF Lin, H Cao, ...
ACS photonics 2 (7), 980-986, 2015
Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers
J Han, KE Waldrip, SR Lee, JJ Figiel, SJ Hearne, GA Petersen, SM Myers
Applied Physics Letters 78 (1), 67-69, 2001
Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism
D Chen, H Xiao, J Han
Journal of Applied Physics 112 (6), 2012
Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures
SJ Hearne, J Han, SR Lee, JA Floro, DM Follstaedt, E Chason, IST Tsong
Applied Physics Letters 76 (12), 1534-1536, 2000
Zinc‐blende MnTe: Epilayers and quantum well structures
SM Durbin, J Han, S O, M Kobayashi, DR Menke, RL Gunshor, Q Fu, ...
Applied physics letters 55 (20), 2087-2089, 1989
The system can't perform the operation now. Try again later.
Articles 1–20