| Qubits made by advanced semiconductor manufacturing AMJ Zwerver, T Krähenmann, TF Watson, L Lampert, HC George, ... Nature Electronics 5 (3), 184-190, 2022 | 305 | 2022 |
| Expanding time–temperature-transformation (TTT) diagrams to interfaces: A new approach for grain boundary engineering PR Cantwell, S Ma, SA Bojarski, GS Rohrer, MP Harmer Acta Materialia 106, 78-86, 2016 | 65 | 2016 |
| Backside contacts for semiconductor devices AD Lilak, E Mannebach, A Phan, RE Schenker, SA Bojarski, W Rachmady, ... US Patent 11,437,283, 2022 | 53 | 2022 |
| Probing single electrons across 300-mm spin qubit wafers S Neyens, OK Zietz, TF Watson, F Luthi, A Nethwewala, HC George, ... Nature 629 (8010), 80-85, 2024 | 50 | 2024 |
| Changes in the grain boundary character and energy distributions resulting from a complexion transition in Ca-doped yttria SA Bojarski, S Ma, W Lenthe, MP Harmer, GS Rohrer Metallurgical and Materials Transactions A 43, 3532-3538, 2012 | 46 | 2012 |
| Influence of grain boundary energy on the nucleation of complexion transitions SA Bojarski, MP Harmer, GS Rohrer Scripta Materialia 88, 1-4, 2014 | 45 | 2014 |
| Influence of Y and La additions on grain growth and the grain‐boundary character distribution of alumina SA Bojarski, M Stuer, Z Zhao, P Bowen, GS Rohrer Journal of the American Ceramic Society 97 (2), 622-630, 2014 | 44 | 2014 |
| High volume electrical characterization of semiconductor qubits R Pillarisetty, HC George, TF Watson, L Lampert, N Thomas, S Bojarski, ... 2019 IEEE International Electron Devices Meeting (IEDM), 31.5. 1-31.5. 4, 2019 | 33 | 2019 |
| The temperature dependence of the relative grain‐boundary energy of yttria‐doped alumina MN Kelly, SA Bojarski, GS Rohrer Journal of the American Ceramic Society 100 (2), 783-791, 2017 | 33 | 2017 |
| The relationship between grain boundary energy, grain boundary complexion transitions, and grain size in Ca-doped Yttria SA Bojarski, J Knighting, SL Ma, W Lenthe, MP Harmer, GS Rohrer Materials Science Forum 753, 87-92, 2013 | 27 | 2013 |
| Resistance and electromigration performance of 6 nm wires JS Chawla, SH Sung, SA Bojarski, CT Carver, M Chandhok, RV Chebiam, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 26 | 2016 |
| Nickel silicide for interconnects KL Lin, SA Bojarski, CT Carver, M Chandhok, JS Chawla, JS Clarke, ... 2015 IEEE International Interconnect Technology Conference and 2015 IEEE …, 2015 | 21 | 2015 |
| Eutaxial growth of hematite Fe2O3 films on perovskite SrTiO3 polycrystalline substrates AM Schultz, Y Zhu, SA Bojarski, GS Rohrer, PA Salvador Thin Solid Films 548, 220-224, 2013 | 19 | 2013 |
| Self-aligned via below subtractively patterned interconnect M Chandhok, RE Schenker, HJ Yoo, KL Lin, JS Chawla, SA Bojarski, ... US Patent 10,546,772, 2020 | 16 | 2020 |
| Aligned pitch-quartered patterning for lithography edge placement error advanced rectification CH Wallace, M Chandhok, PA Nyhus, E Han, SA Bojarski, F Gstrein, ... US Patent App. 16/068,095, 2019 | 10 | 2019 |
| Quantitative differences in the Y grain boundary excess at boundaries delimiting large and small grains in Y doped Al2O3 H Sternlicht, SA Bojarski, GS Rohrer, WD Kaplan Journal of the European Ceramic Society 38 (4), 1829-1835, 2018 | 9 | 2018 |
| Integrated quantum circuit assemblies for cooling apparatus L Lampert, R Pillarisetty, NK Thomas, HC George, JM Roberts, ... US Patent 11,011,693, 2021 | 8 | 2021 |
| Vertically stacked transistor devices with isolation wall structures containing an electrical conductor AD Lilak, A Phan, P Morrow, SA Bojarski US Patent 11,257,738, 2022 | 7 | 2022 |
| Si MOS and Si/SiGe quantum well spin qubit platforms for scalable quantum computing R Pillarisetty, TF Watson, B Mueller, E Henry, HC George, S Bojarski, ... 2021 IEEE International Electron Devices Meeting (IEDM), 14.1. 1-14.1. 4, 2021 | 6 | 2021 |
| Non-planar transistors with channel regions having varying widths SD Snyder, L Guler, R Schenker, MK Harper, S Sivakumar, U Alaan, ... US Patent 11,569,231, 2023 | 5 | 2023 |
