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Stephanie A. Bojarski
Stephanie A. Bojarski
Intel Corporation
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Cited by
Year
Qubits made by advanced semiconductor manufacturing
AMJ Zwerver, T Krähenmann, TF Watson, L Lampert, HC George, ...
Nature Electronics 5 (3), 184-190, 2022
3052022
Expanding time–temperature-transformation (TTT) diagrams to interfaces: A new approach for grain boundary engineering
PR Cantwell, S Ma, SA Bojarski, GS Rohrer, MP Harmer
Acta Materialia 106, 78-86, 2016
652016
Backside contacts for semiconductor devices
AD Lilak, E Mannebach, A Phan, RE Schenker, SA Bojarski, W Rachmady, ...
US Patent 11,437,283, 2022
532022
Probing single electrons across 300-mm spin qubit wafers
S Neyens, OK Zietz, TF Watson, F Luthi, A Nethwewala, HC George, ...
Nature 629 (8010), 80-85, 2024
502024
Changes in the grain boundary character and energy distributions resulting from a complexion transition in Ca-doped yttria
SA Bojarski, S Ma, W Lenthe, MP Harmer, GS Rohrer
Metallurgical and Materials Transactions A 43, 3532-3538, 2012
462012
Influence of grain boundary energy on the nucleation of complexion transitions
SA Bojarski, MP Harmer, GS Rohrer
Scripta Materialia 88, 1-4, 2014
452014
Influence of Y and La additions on grain growth and the grain‐boundary character distribution of alumina
SA Bojarski, M Stuer, Z Zhao, P Bowen, GS Rohrer
Journal of the American Ceramic Society 97 (2), 622-630, 2014
442014
High volume electrical characterization of semiconductor qubits
R Pillarisetty, HC George, TF Watson, L Lampert, N Thomas, S Bojarski, ...
2019 IEEE International Electron Devices Meeting (IEDM), 31.5. 1-31.5. 4, 2019
332019
The temperature dependence of the relative grain‐boundary energy of yttria‐doped alumina
MN Kelly, SA Bojarski, GS Rohrer
Journal of the American Ceramic Society 100 (2), 783-791, 2017
332017
The relationship between grain boundary energy, grain boundary complexion transitions, and grain size in Ca-doped Yttria
SA Bojarski, J Knighting, SL Ma, W Lenthe, MP Harmer, GS Rohrer
Materials Science Forum 753, 87-92, 2013
272013
Resistance and electromigration performance of 6 nm wires
JS Chawla, SH Sung, SA Bojarski, CT Carver, M Chandhok, RV Chebiam, ...
2016 IEEE International Interconnect Technology Conference/Advanced …, 2016
262016
Nickel silicide for interconnects
KL Lin, SA Bojarski, CT Carver, M Chandhok, JS Chawla, JS Clarke, ...
2015 IEEE International Interconnect Technology Conference and 2015 IEEE …, 2015
212015
Eutaxial growth of hematite Fe2O3 films on perovskite SrTiO3 polycrystalline substrates
AM Schultz, Y Zhu, SA Bojarski, GS Rohrer, PA Salvador
Thin Solid Films 548, 220-224, 2013
192013
Self-aligned via below subtractively patterned interconnect
M Chandhok, RE Schenker, HJ Yoo, KL Lin, JS Chawla, SA Bojarski, ...
US Patent 10,546,772, 2020
162020
Aligned pitch-quartered patterning for lithography edge placement error advanced rectification
CH Wallace, M Chandhok, PA Nyhus, E Han, SA Bojarski, F Gstrein, ...
US Patent App. 16/068,095, 2019
102019
Quantitative differences in the Y grain boundary excess at boundaries delimiting large and small grains in Y doped Al2O3
H Sternlicht, SA Bojarski, GS Rohrer, WD Kaplan
Journal of the European Ceramic Society 38 (4), 1829-1835, 2018
92018
Integrated quantum circuit assemblies for cooling apparatus
L Lampert, R Pillarisetty, NK Thomas, HC George, JM Roberts, ...
US Patent 11,011,693, 2021
82021
Vertically stacked transistor devices with isolation wall structures containing an electrical conductor
AD Lilak, A Phan, P Morrow, SA Bojarski
US Patent 11,257,738, 2022
72022
Si MOS and Si/SiGe quantum well spin qubit platforms for scalable quantum computing
R Pillarisetty, TF Watson, B Mueller, E Henry, HC George, S Bojarski, ...
2021 IEEE International Electron Devices Meeting (IEDM), 14.1. 1-14.1. 4, 2021
62021
Non-planar transistors with channel regions having varying widths
SD Snyder, L Guler, R Schenker, MK Harper, S Sivakumar, U Alaan, ...
US Patent 11,569,231, 2023
52023
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