Radiation damage effects in Ga 2 O 3 materials and devices J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov Journal of Materials Chemistry C 7 (1), 10-24, 2019 | 202 | 2019 |
Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, SJ Pearton, ... Applied Physics Letters 113 (9), 2018 | 96 | 2018 |
Unipolar electron transport polymers: a thiazole based all-electron acceptor approach Z Yuan, B Fu, S Thomas, S Zhang, G DeLuca, R Chang, L Lopez, C Fares, ... Chemistry of Materials 28 (17), 6045-6049, 2016 | 85 | 2016 |
Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays J Yang, M Xian, P Carey, C Fares, J Partain, F Ren, M Tadjer, E Anber, ... Applied Physics Letters 114 (23), 2019 | 69 | 2019 |
Temperature-dependent electrical characteristics of β-Ga2O3 diodes with W Schottky contacts up to 500° C C Fares, F Ren, SJ Pearton ECS Journal of Solid State Science and Technology 8 (7), Q3007, 2018 | 69 | 2018 |
Reverse breakdown in large area, field-plated, vertical β-Ga2O3 rectifiers J Yang, C Fares, R Elhassani, M Xian, F Ren, SJ Pearton, M Tadjer, ... ECS Journal of Solid State Science and Technology 8 (7), Q3159, 2019 | 52 | 2019 |
Effect of probe geometry during measurement of> 100 A Ga2O3 vertical rectifiers R Sharma, M Xian, C Fares, ME Law, M Tadjer, KD Hobart, F Ren, ... Journal of Vacuum Science & Technology A 39 (1), 2021 | 45 | 2021 |
Damage recovery and dopant diffusion in Si and Sn ion implanted β-Ga2O3 MJ Tadjer, C Fares, NA Mahadik, JA Freitas, D Smith, R Sharma, ME Law, ... ECS Journal of Solid State Science and Technology 8 (7), Q3133, 2019 | 37 | 2019 |
Effects of fluorine incorporation into β-Ga2O3 J Yang, C Fares, F Ren, R Sharma, E Patrick, ME Law, SJ Pearton, ... Journal of Applied Physics 123 (16), 2018 | 35 | 2018 |
Demonstration of a SiC protective coating for titanium implants C Fares, SM Hsu, M Xian, X Xia, F Ren, JJ Mecholsky Jr, L Gonzaga, ... Materials 13 (15), 3321, 2020 | 32 | 2020 |
The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 R Sharma, ME Law, C Fares, M Tadjer, F Ren, A Kuramata, SJ Pearton AIP Advances 9 (8), 2019 | 32 | 2019 |
Device processing and junction formation needs for ultra-high power Ga2O3 electronics F Ren, JC Yang, C Fares, SJ Pearton MRS Communications 9 (1), 77-87, 2019 | 32 | 2019 |
Switching behavior and forward bias degradation of 700V, 0.2 A, β-Ga2O3 vertical geometry rectifiers J Yang, C Fares, F Ren, YT Chen, YT Liao, CW Chang, J Lin, M Tadjer, ... ECS Journal of Solid State Science and Technology 8 (7), Q3028, 2019 | 30 | 2019 |
60Co gamma ray damage in homoepitaxial β-Ga2O3 Schottky rectifiers J Yang, GJ Koller, C Fares, F Ren, SJ Pearton, J Bae, J Kim, DJ Smith ECS Journal of Solid State Science and Technology 8 (7), Q3041, 2019 | 28 | 2019 |
Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3 C Fares, F Ren, E Lambers, DC Hays, BP Gila, SJ Pearton Journal of Electronic Materials 48, 1568-1573, 2019 | 27 | 2019 |
Band alignment of atomic layer deposited SiO2 on (010)(Al0. 14Ga0. 86) 2O3 C Fares, F Ren, E Lambers, DC Hays, BP Gila, SJ Pearton Journal of Vacuum Science & Technology B 36 (6), 2018 | 27 | 2018 |
Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010)(Al0. 14Ga0. 86) 2O3 C Fares, F Ren, DC Hays, BP Gila, M Tadjer, KD Hobart, SJ Pearton Applied Physics Letters 113 (18), 2018 | 26 | 2018 |
Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers M Xian, R Elhassani, C Fares, F Ren, M Tadjer, SJ Pearton Journal of Vacuum Science & Technology B 37 (6), 2019 | 25 | 2019 |
Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-Ga2O3 Schottky rectifiers J Yang, C Fares, Y Guan, F Ren, SJ Pearton, J Bae, J Kim, A Kuramata Journal of Vacuum Science & Technology B 36 (3), 2018 | 25 | 2018 |
Titanium corrosion in peri-implantitis MD Soler, SM Hsu, C Fares, F Ren, RJ Jenkins, L Gonzaga, AE Clark, ... Materials 13 (23), 5488, 2020 | 24 | 2020 |