Spin-orbit torque-induced switching in ferrimagnetic alloys: Experiments and modeling SG Je, JC Rojas-Sánchez, TH Pham, P Vallobra, G Malinowski, D Lacour, ... Applied Physics Letters 112 (6), 2018 | 90 | 2018 |
Determination of spin Hall angle, spin mixing conductance, and spin diffusion length in CoFeB/Ir for spin-orbitronic devices T Fache, JC Rojas-Sanchez, L Badie, S Mangin, S Petit-Watelot Physical Review B 102 (6), 064425, 2020 | 47 | 2020 |
Magnetic field and temperature control over Pt/Co/Ir/Co/Pt multistate magnetic logic device R Morgunov, A Hamadeh, T Fache, G Lvova, O Koplak, A Talantsev, ... Superlattices and Microstructures 104, 509-517, 2017 | 31 | 2017 |
Manipulating exchange bias using all-optical helicity-dependent switching P Vallobra, T Fache, Y Xu, L Zhang, G Malinowski, M Hehn, ... Physical review B 96 (14), 144403, 2017 | 28 | 2017 |
Nonmonotonic aftereffect measurements in perpendicular synthetic ferrimagnets T Fache, HS Tarazona, J Liu, G L’vova, MJ Applegate, JC Rojas-Sanchez, ... Physical Review B 98 (6), 064410, 2018 | 23 | 2018 |
Strain-Enhanced Charge-to-Spin Conversion in Multilayers Grown on Flexible Mica Substrate E Liu, T Fache, D Cespedes-Berrocal, Z Zhang, S Petit-Watelot, S Mangin, ... Physical Review Applied 12 (4), 044074, 2019 | 22 | 2019 |
Relaxation dynamics of magnetization transitions in synthetic antiferromagnet with perpendicular anisotropy A Talantsev, Y Lu, T Fache, M Lavanant, A Hamadeh, A Aristov, O Koplak, ... Journal of Physics: Condensed Matter 30 (13), 135804, 2018 | 22 | 2018 |
Influence of the magnetic field sweeping rate on magnetic transitions in synthetic ferrimagnets with perpendicular anisotropy RB Morgunov, EI Kunitsyna, AD Talantsev, OV Koplak, T Fache, Y Lu, ... Applied Physics Letters 114 (22), 2019 | 15 | 2019 |
Magnetic aftereffects in CoFeB/Ta/CoFeB spin valves of large area R Morgunov, Y Lu, M Lavanant, T Fache, X Deveaux, S Migot, O Koplak, ... Physical Review B 96 (5), 054421, 2017 | 11 | 2017 |
Effect of Co layer thickness on magnetic relaxation in Pt/Co/Ir/Co/Pt/GaAs spin valve RB Morgunov, GL L'vova, AD Talantsev, OV Koplak, T Fache, S Mangin Journal of Magnetism and Magnetic Materials 459, 33-36, 2018 | 9 | 2018 |
High performance silicon-based substrate using buried PN junctions towards RF applications M Moulin, M Rack, T Fache, Z Chalupa, C Plantier, Y Morand, J Lacord, ... 2021 Joint International EUROSOI Workshop and International Conference on …, 2021 | 5 | 2021 |
High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications M Moulin, M Rack, T Fache, Z Chalupa, C Plantier, Y Morand, J Lacord, ... Solid-State Electronics 194, 108301, 2022 | 3 | 2022 |
Nox and Buried PN junctions effect on RF performance of High-Resistivity Silicon substrates M Moulin, M Rack, T Fache, M Nabet, Z Chalupa, C Plantier, F Allibert, ... 2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2022 | 2 | 2022 |
Dzyaloshinskii–Moriya interaction determined from spin wave nonreciprocity and magnetic bubble asymmetry in Pt/Co/Ir/Co/Pt synthetic ferrimagnets O Koplak, A Bezverkhnii, A Sadovnikov, R Morgunov, M Hehn, JL Bello, ... Journal of Physics: Condensed Matter 34 (8), 085803, 2021 | 2 | 2021 |
Dzyaloshinskii-Moriya interaction probed by magnetization reversal in bilayer Pt/Co/Ir/Co/Pt synthetic ferrimagnets RB Morgunov, AI Bezverkhnii, M Hehn, JL Bello, T Fache, S Mangin Physical Review B 104 (13), 134424, 2021 | 2 | 2021 |
Field Effect Depletion Regions exploiting different Qox polarities for Interface Passivation in High-Resistivity Silicon Substrates M Moulin, T Fache, M Rack, C Plantier, J Lugo, L Hutin, JP Raskin 2023 International VLSI Symposium on Technology, Systems and Applications …, 2023 | 1 | 2023 |
Iridium-based synthetic ferrimagnets for spintronics T Fache Université de Lorraine, 2020 | 1 | 2020 |
Rf substrate comprising depletion regions induced by field effect L Hutin, M Moulin, T Fache, C Plantier, JP Raskin, M Rack US Patent App. 18/337,269, 2023 | | 2023 |
A cost effective RF-SOI Drain Extended MOS transistor featuring PSAT=19dBm @28GHz & VDD=3V for 5G Power Amplifier application X Garros, A Divay, J Lacord, A Serhan, T Fache, J Antonijevic, S Crémer, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices T Bordignon, B Duriez, N Guitard, R Duru, C Pribat, J Richy, S Reboh, ... Solid-State Electronics 210, 108787, 2023 | | 2023 |