S. T. Picraux
S. T. Picraux
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Materials analysis by ion channeling: submicron crystallography
LC Feldman, JW Mayer, STA Picraux
Academic Press, 2012
Anisotropic swelling and fracture of silicon nanowires during lithiation
XH Liu, H Zheng, L Zhong, S Huang, K Karki, LQ Zhang, Y Liu, A Kushima, ...
Nano letters 11 (8), 3312-3318, 2011
In situ atomic-scale imaging of electrochemical lithiation in silicon
XH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ...
Nature nanotechnology 7 (11), 749-756, 2012
Ultrafast electrochemical lithiation of individual Si nanowire anodes
XH Liu, LQ Zhang, L Zhong, Y Liu, H Zheng, JW Wang, JH Cho, ...
Nano letters 11 (6), 2251-2258, 2011
Adaptable silicon–carbon nanocables sandwiched between reduced graphene oxide sheets as lithium ion battery anodes
B Wang, X Li, X Zhang, B Luo, M Jin, M Liang, SA Dayeh, ST Picraux, ...
ACS nano 7 (2), 1437-1445, 2013
Reversible nanopore formation in Ge nanowires during lithiation–delithiation cycling: An in situ transmission electron microscopy study
XH Liu, S Huang, ST Picraux, J Li, T Zhu, JY Huang
Nano letters 11 (9), 3991-3997, 2011
Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
JW Mayer, L Eriksson, ST Picraux, JA Davies
Canadian Journal of Physics 46 (6), 663-673, 1968
Ion beams in silicon processing and characterization
E Chason, ST Picraux, JM Poate, JO Borland, MI Current, ...
Journal of applied physics 81 (10), 6513-6561, 1997
Epitaxial growth of rare‐earth silicides on (111) Si
JA Knapp, ST Picraux
Applied physics letters 48 (7), 466-468, 1986
Lotus effect amplifies light-induced contact angle switching
R Rosario, D Gust, AA Garcia, M Hayes, JL Taraci, T Clement, JW Dailey, ...
The Journal of Physical Chemistry B 108 (34), 12640-12642, 2004
Dependence of critical layer thickness on strain for InxGa1− xAs/GaAs strained‐layer superlattices
IJ Fritz, ST Picraux, LR Dawson, TJ Drummond, WD Laidig, NG Anderson
Applied Physics Letters 46 (10), 967-969, 1985
Are nanoporous materials radiation resistant?
EM Bringa, JD Monk, A Caro, A Misra, L Zepeda-Ruiz, M Duchaineau, ...
Nano letters 12 (7), 3351-3355, 2012
Critical Stresses for Strained-Layer Plasticity
JY Tsao, BW Dodson, ST Picraux, DM Cornelison
Physical review letters 59 (21), 2455, 1987
Formation of SiC in silicon by ion implantation
JA Borders, ST Picraux, W Beezhold
Applied Physics Letters 18 (11), 509-511, 1971
Role of integrated lateral stress in surface deformation of He‐implanted surfaces
EP EerNisse, ST Picraux
Journal of Applied Physics 48 (1), 9-17, 1977
Defect trapping of ion‐implanted deuterium in Fe
SM Myers, ST Picraux, RE Stoltz
Journal of Applied Physics 50 (9), 5710-5719, 1979
Partitioning of ion-induced surface and bulk displacements
DK Brice, JY Tsao, ST Picraux
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1989
Direct observation of nanoscale size effects in Ge semiconductor nanowire growth
SA Dayeh, ST Picraux
Nano letters 10 (10), 4032-4039, 2010
Precipitation and relaxation in strained Si1−yCy/Si heterostructures
JW Strane, HJ Stein, SR Lee, ST Picraux, JK Watanabe, JW Mayer
Journal of applied physics 76 (6), 3656-3668, 1994
Metastable SiGeC formation by solid phase epitaxy
JW Strane, HJ Stein, SR Lee, BL Doyle, ST Picraux, JW Mayer
Applied physics letters 63 (20), 2786-2788, 1993
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