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Graham E. Rowlands
Graham E. Rowlands
Research Scientist, BBN Technologies
Verified email at raytheon.com - Homepage
Title
Cited by
Cited by
Year
Voltage-induced ferromagnetic resonance in magnetic tunnel junctions
J Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ...
Physical review letters 108 (19), 197203, 2012
3132012
Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ...
Journal of Applied Physics 109 (7), 2011
2392011
Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ...
Applied Physics Letters 98 (11), 2011
2262011
Nanosecond-timescale low energy switching of in-plane magnetic tunnel junctions through dynamic Oersted-field-assisted spin Hall effect
SV Aradhya, GE Rowlands, J Oh, DC Ralph, RA Buhrman
Nano letters 16 (10), 5987-5992, 2016
1562016
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ...
Applied Physics Letters 98 (10), 2011
1152011
Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy
H Zhao, B Glass, PK Amiri, A Lyle, Y Zhang, YJ Chen, G Rowlands, ...
Journal of Physics D: Applied Physics 45 (2), 025001, 2011
902011
Quantum reservoir computing with a single nonlinear oscillator
LCG Govia, GJ Ribeill, GE Rowlands, HK Krovi, TA Ohki
Physical Review Research 3 (1), 013077, 2021
852021
Compact model for spin–orbit magnetic tunnel junctions
M Kazemi, GE Rowlands, E Ipek, RA Buhrman, EG Friedman
IEEE Transactions on Electron Devices 63 (2), 848-855, 2016
802016
Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells
ZM Zeng, P Khalili Amiri, G Rowlands, H Zhao, IN Krivorotov, JP Wang, ...
Applied Physics Letters 98 (7), 2011
762011
Strategies and tolerances of spin transfer torque switching
DE Nikonov, GI Bourianoff, G Rowlands, IN Krivorotov
Journal of Applied Physics 107 (11), 2010
692010
Macrospin modeling of sub-ns pulse switching of perpendicularly magnetized free layer via spin-orbit torques for cryogenic memory applications
J Park, GE Rowlands, OJ Lee, DC Ralph, RA Buhrman
Applied Physics Letters 105 (10), 2014
662014
Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM
PK Amiri, ZM Zeng, P Upadhyaya, G Rowlands, H Zhao, IN Krivorotov, ...
IEEE Electron Device Letters 32 (1), 57-59, 2010
652010
Nonlinear ferromagnetic resonance induced by spin torque in nanoscale magnetic tunnel junctions
X Cheng, JA Katine, GE Rowlands, IN Krivorotov
Applied Physics Letters 103 (8), 2013
642013
Magnetization dynamics in a dual free-layer spin-torque nano-oscillator
GE Rowlands, IN Krivorotov
Physical Review B 86 (9), 094425, 2012
622012
Cryogenic memory architecture integrating spin Hall effect based magnetic memory and superconductive cryotron devices
MH Nguyen, GJ Ribeill, MV Gustafsson, S Shi, SV Aradhya, AP Wagner, ...
Scientific reports 10 (1), 248, 2020
442020
Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect
SV Aradhya, RA Buhrman, DC Ralph, GE Rowlands
US Patent 10,333,058, 2019
432019
SuperMind: A survey of the potential of superconducting electronics for neuromorphic computing
M Schneider, E Toomey, G Rowlands, J Shainline, P Tschirhart, K Segall
Superconductor Science and Technology 35 (5), 053001, 2022
412022
Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions
GE Rowlands, SV Aradhya, S Shi, EH Yandel, J Oh, DC Ralph, ...
Applied Physics Letters 110 (12), 2017
392017
Reduction of switching current density in perpendicular magnetic tunnel junctions by tuning the anisotropy of the CoFeB free layer
MT Rahman, A Lyle, P Khalili Amiri, J Harms, B Glass, H Zhao, ...
Journal of Applied Physics 111 (7), 2012
392012
A cryogenic spin-torque memory element with precessional magnetization dynamics
GE Rowlands, CA Ryan, L Ye, L Rehm, D Pinna, AD Kent, TA Ohki
Scientific reports 9 (1), 803, 2019
322019
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