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Jae Woo, Lee
Jae Woo, Lee
Verified email at korea.ac.kr
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Cited by
Year
Negative capacitance FinFET with sub-20-mV/decade subthreshold slope and minimal hysteresis of 0.48 V
E Ko, JW Lee, C Shin
IEEE Electron Device Letters 38 (4), 418-421, 2017
1212017
Low-frequency noise in junctionless multigate transistors
D Jang, JW Lee, CW Lee, JP Colinge, L Montès, JI Lee, GT Kim, ...
Applied Physics Letters 98 (13), 2011
702011
An improved AFM cross-sectional method for piezoelectric nanostructures properties investigation: application to GaN nanowires
X Xu, A Potié, R Songmuang, JW Lee, B Bercu, T Baron, B Salem, ...
Nanotechnology 22 (10), 105704, 2011
582011
Quantitative temperature measurement of an electrically heated carbon nanotube using the null-point method
J Chung, K Kim, G Hwang, O Kwon, S Jung, J Lee, JW Lee, GT Kim
Review of Scientific Instruments 81 (11), 2010
562010
Mobility analysis of surface roughness scattering in FinFET devices
JW Lee, D Jang, M Mouis, GT Kim, T Chiarella, T Hoffmann, G Ghibaudo
Solid-State Electronics 62 (1), 195-201, 2011
502011
Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors
J Woo Lee, Y Sasaki, M Ju Cho, M Togo, G Boccardi, R Ritzenthaler, ...
Applied Physics Letters 102 (22), 2013
382013
Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors
JW Lee, D Jang, GT Kim, M Mouis, G Ghibaudo
Journal of Applied Physics 107 (4), 2010
352010
Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors
D Jang, JW Lee, K Tachi, L Montes, T Ernst, GT Kim, G Ghibaudo
Applied Physics Letters 97 (7), 2010
312010
Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs
M Togo, JW Lee, L Pantisano, T Chiarella, R Ritzenthaler, R Krom, ...
2012 International Electron Devices Meeting, 18.2. 1-18.2. 4, 2012
232012
Assessment of the impact of inelastic tunneling on the frequency-depth conversion from low-frequency noise spectra
E Simoen, JW Lee, C Claeys
IEEE Transactions on Electron Devices 61 (2), 634-637, 2014
202014
1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor
J Woo Lee, E Simoen, R Ritzenthaler, M Togo, G Boccardi, J Mitard, ...
Applied Physics Letters 102 (7), 2013
202013
Impact of trap localization on low-frequency noise in nanoscale device
JW Lee, WS Yun, G Ghibaudo
Journal of Applied Physics 115 (19), 2014
192014
Comparison of temperature dependent carrier transport in FinFET and gate-all-around nanowire FET
S Kim, J Kim, D Jang, R Ritzenthaler, B Parvais, J Mitard, H Mertens, ...
Applied Sciences 10 (8), 2979, 2020
182020
Degradation pattern of black phosphorus multilayer field− effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors
BC Lee, CM Kim, HK Jang, JW Lee, MK Joo, GT Kim
Applied Surface Science 419, 637-641, 2017
182017
Performance and reliability of high-mobility Si0.55Ge0.45p-channel FinFETs based on epitaxial cladding of Si Fins
H Mertens, R Ritzenthaler, A Hikavyy, J Franco, JW Lee, DP Brunco, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
152014
Sidewall Crystalline Orientation Effect of Post-treatments for Replacement Metal Gate Bulk Fin Field Effect Transistor
JW Lee, E Simoen, A Veloso, MJ Cho, G Boccardi, LÅ Ragnarsson, ...
ACS Applied Materials & Interfaces 5 (18), 8865–8868, 2013
152013
Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement
J Woo Lee, D Jang, M Mouis, K Tachi, G Tae Kim, T Ernst, G Ghibaudo
Applied Physics Letters 101 (14), 2012
152012
Maskless optical microscope lithography system
ES Park, D Jang, J Lee, YJ Kim, J Na, H Ji, JW Choi, GT Kim
Review of Scientific Instruments 80 (12), 2009
152009
Heated implantation with amorphous carbon CMOS mask for scaled FinFETs
M Togo, Y Sasaki, G Zschaetzsch, G Boccardi, R Ritzenthaler, JW Lee, ...
2013 Symposium on VLSI Technology, T196-T197, 2013
142013
Low-Frequency-Noise-Based Oxide Trap Profiling in Replacement High-κ/Metal-Gate pMOSFETs
E Simoen, JW Lee, A Veloso, V Paraschiv, N Horiguchi, C Claeys
ECS Journal of Solid State Science and Technology 3 (6), Q127, 2014
13*2014
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