|Quantized Faraday and Kerr rotation and axion electrodynamics of a 3D topological insulator|
L Wu, M Salehi, N Koirala, J Moon, S Oh, NP Armitage
Science 354 (6316), 1124-1127, 2016
|Record surface state mobility and quantum Hall effect in topological insulator thin films via interface engineering|
N Koirala, M Brahlek, M Salehi, L Wu, J Dai, J Waugh, T Nummy, MG Han, ...
Nano letters 15 (12), 8245-8249, 2015
|Ultra-high modulation depth exceeding 2,400% in optically controlled topological surface plasmons|
S Sim, H Jang, N Koirala, M Brahlek, J Moon, JH Sung, J Park, S Cha, ...
Nature Communications 6 (1), 8814, 2015
|Highly Sensitive, Gate-Tunable, Room-Temperature Mid-Infrared Photodetection Based on Graphene–Bi2Se3 Heterostructure|
J Kim, S Park, H Jang, N Koirala, JB Lee, UJ Kim, HS Lee, YG Roh, H Lee, ...
ACS Photonics 4 (3), 482-488, 2017
|Efficient charge-spin conversion and magnetization switching through the Rashba effect at topological-insulator/Ag interfaces|
S Shi, A Wang, Y Wang, R Ramaswamy, L Shen, J Moon, D Zhu, J Yu, ...
Physical Review B 97 (4), 041115, 2018
|Direct visualization of current-induced spin accumulation in topological insulators|
Y Liu, J Besbas, Y Wang, P He, M Chen, D Zhu, Y Wu, JM Lee, L Wang, ...
Nature communications 9 (1), 2492, 2018
|Record High-Proximity-Induced Anomalous Hall Effect in (BixSb1–x)2Te3 Thin Film Grown on CrGeTe3 Substrate|
X Yao, B Gao, MG Han, D Jain, J Moon, JW Kim, Y Zhu, SW Cheong, ...
Nano letters 19 (7), 4567-4573, 2019
|Control over Electron–Phonon Interaction by Dirac Plasmon Engineering in the Bi2Se3 Topological Insulator|
C In, S Sim, B Kim, H Bae, H Jung, W Jang, M Son, J Moon, M Salehi, ...
Nano letters 18 (2), 734-739, 2018
|Finite-Size and Composition-Driven Topological Phase Transition in (Bi1–xInx)2Se3 Thin Films|
M Salehi, H Shapourian, N Koirala, MJ Brahlek, J Moon, S Oh
Nano letters 16 (9), 5528-5532, 2016
|Brief review on iron-based superconductors: are there clues for unconventional superconductivity?|
H Oh, J Moon, D Shin, CY Moon, HJ Choi
arXiv preprint arXiv:1201.0237, 2011
|Solution to the Hole-Doping Problem and Tunable Quantum Hall Effect in Bi2Se3 Thin Films|
J Moon, N Koirala, M Salehi, W Zhang, W Wu, S Oh
Nano letters 18 (2), 820-826, 2018
|Disorder-driven topological phase transition in films|
M Brahlek, N Koirala, M Salehi, J Moon, W Zhang, H Li, X Zhou, MG Han, ...
Physical Review B 94 (16), 165104, 2016
|Helicity‐Dependent Photovoltaic Effect in Bi2Se3 Under Normal Incident Light|
J Besbas, K Banerjee, J Son, Y Wang, Y Wu, M Brahlek, N Koirala, ...
Advanced Optical Materials 4 (10), 1642-1650, 2016
|Stability of low-carrier-density topological-insulator Bi2Se3 thin films and effect of capping layers|
M Salehi, M Brahlek, N Koirala, J Moon, L Wu, NP Armitage, S Oh
APL Materials 3 (9), 2015
|Coexistence of bulk and surface states probed by Shubnikov–de Haas oscillations in with high charge-carrier density|
EK de Vries, S Pezzini, MJ Meijer, N Koirala, M Salehi, J Moon, S Oh, ...
Physical Review B 96 (4), 045433, 2017
|Quantum‐Hall to Insulator Transition in Ultra‐Low‐Carrier‐Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level|
M Salehi, H Shapourian, IT Rosen, MG Han, J Moon, P Shibayev, D Jain, ...
Advanced Materials 31 (36), 1901091, 2019
|Picosecond Competing Dynamics of Apparent Semiconducting-Metallic Phase Transition in the Topological Insulator Bi2Se3|
S Sim, S Lee, J Moon, C In, J Lee, M Noh, J Kim, W Jang, S Cha, SY Seo, ...
ACS Photonics 7 (3), 759-764, 2020
|Electric field modulated topological magnetoelectric effect in |
M Mondal, D Chaudhuri, M Salehi, C Wan, NJ Laurita, B Cheng, AV Stier, ...
Physical Review B 98 (12), 121106, 2018
|Ferromagnetic Anomalous Hall Effect in Cr-Doped Bi2Se3 Thin Films via Surface-State Engineering|
J Moon, J Kim, N Koirala, M Salehi, D Vanderbilt, S Oh
Nano Letters 19 (6), 3409-3414, 2019
|Correlated plasmons in the topological insulator Bi2Se3 induced by long-range electron correlations|
TJ Whitcher, MG Silly, M Yang, PK Das, D Peyrot, X Chi, M Eddrief, ...
NPG Asia Materials 12 (1), 37, 2020