| Growth mechanism and physical properties of the type-I In0. 145Ga0. 855AsySb1− y/GaSb alloys with low As content for near infrared applications YL Casallas-Moreno, G Villa-Martínez, M Ramírez-López, ... Journal of Alloys and Compounds 808, 151690, 2019 | 14 | 2019 |
| Reconstruction of original indium distribution in InGaAs quantum wells from experimental SIMS depth profiles Y Kudriavtsev, R Asomoza, S Gallardo-Hernandez, M Ramirez-Lopez, ... Physica B: Condensed Matter 453, 53-58, 2014 | 14 | 2014 |
| Photoluminescence spectroscopy as a tool for quality control of GaN thin film to be used in solar cell devices G Santana, A Mejía-Montero, BM Monroy, M López-López, ... 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 1852-1854, 2014 | 12 | 2014 |
| Study of structural properties of cubic InN films on GaAs (001) substrates by molecular beam epitaxy and migration enhanced epitaxy YL Casallas-Moreno, M Pérez-Caro, S Gallardo-Hernández, ... Journal of Applied Physics 113 (21), 2013 | 12 | 2013 |
| Study of the pseudo-(1× 1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBE E Cruz-Hernández, M Ramirez-Lopez, M Pérez-Caro, PG Mani-Gonzalez, ... Journal of crystal growth 378, 295-298, 2013 | 10 | 2013 |
| Effect of the Sb content and the n− and p− GaSb (100) substrates on the physical and chemical properties of InSbxAs1-x alloys for mid-infrared applications: Analysis of surface … YL Casallas-Moreno, M Ramírez-López, G Villa-Martínez, ... Journal of Alloys and Compounds 861, 157936, 2021 | 9 | 2021 |
| Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolar m-plane GaN surfaces to vacuum and air ambient Ł Janicki, M Ramírez-López, J Misiewicz, G Cywiński, M Boćkowski, ... Japanese Journal of Applied Physics 55 (5S), 05FA08, 2016 | 9 | 2016 |
| Self-assembly of compositionally modulated Ga1− xMnxAs multilayers during molecular beam epitaxy S Gallardo-Hernández, I Martinez-Velis, M Ramirez-Lopez, Y Kudriatsev, ... Applied Physics Letters 103 (19), 2013 | 9 | 2013 |
| Optical studies of nitrogen plasma for molecular beam epitaxy of InN M Pérez-Caro, M Ramírez-López, S Hernández-Méndez, BAG Rodríguez, ... Journal of Applied Physics 128 (21), 2020 | 7 | 2020 |
| Si− doped In0. 145Ga0. 855As0. 123Sb0. 877: A novel p− type quaternary alloy with high crystalline quality G Villa-Martínez, DM Hurtado-Castañeda, YL Casallas-Moreno, ... Solid State Sciences 123, 106797, 2022 | 4 | 2022 |
| Growth mechanism and properties of self-assembled InN nanocolumns on Al covered Si (111) substrates by PA-MBE YL Casallas-Moreno, S Gallardo-Hernández, CM Yee-Rendón, ... Materials 12 (19), 3203, 2019 | 4 | 2019 |
| Study of interference effects on the photoluminescence of AlGaN/GaN quantum wells M Ramírez‐López, YL Casallas‐Moreno, M Pérez‐Caro, ... physica status solidi c 12 (4-5), 365-368, 2015 | 4 | 2015 |
| Concomitant abatement of ciprofloxacin, sulfamethoxazole and cefadroxil in synthetic wastewater using hybrid photoelectrochemical ozonation driven on TiO2 containing C, N and P … D Palomares-Reyna, FS Sosa-Rodríguez, REP Goyes, ... Journal of Hazardous Materials Advances 8, 100179, 2022 | 3 | 2022 |
| Effects of in situ annealing of GaAs (100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy H Morales-Cortés, C Mejia-Garcia, VH Méndez-García, D Vázquez-Cortés, ... Nanotechnology 21 (13), 134012, 2010 | 3 | 2010 |
| Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates VH Méndez‐García, I Martínez‐Velis, JS Rojas‐Ramirez, ... physica status solidi (a) 206 (5), 836-841, 2009 | 3 | 2009 |
| Indium incorporation at InxGa1-xN relaxed self-assembled nanostructures on Si substrates O de Melo, M Ramírez-López, M Pérez-Caro, S Gallardo-Hernández, ... Materials Science in Semiconductor Processing 150, 106946, 2022 | 2 | 2022 |
| Importance of liquid phase epitaxy on achieving near-lattice-matched growth of In0. 145Ga0. 855As0. 132Sb0. 868 layers on GaSb (100) substrates MA González-Morales, JJ Cruz-Bueno, M Ramírez-López, ... Superficies y vacío 35, 2022 | 2 | 2022 |
| Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films LI Espinosa-Vega, AG Rodriguez, E Cruz-Hernandez, I Martinez-Veliz, ... Journal of crystal growth 378, 105-108, 2013 | 2 | 2013 |
| Optical and electrical study of cap layer effect in QHE devices with double-2DEG L Zamora-Peredo, I Cortes-Mestizo, L García-Gonzáez, ... MRS Online Proceedings Library (OPL) 1617, 31-36, 2013 | 2 | 2013 |
| Photoreflectance study of GaMnAs layers grown by MBE I Martínez-Velis, R Contreras-Guerrero, JS Rojas-Ramírez, ... Journal of crystal growth 323 (1), 344-347, 2011 | 2 | 2011 |
